| 浅杂质势与窄量子阱的耦合作用 |
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| 引用本文： | 朱嘉麟. 浅杂质势与窄量子阱的耦合作用[J]. 物理学报, 1989, 38(7): 1093-1102 |
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| 作者姓名： | 朱嘉麟 |
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| 作者单位： | 清华大学现代应用物理系 |
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| 摘 要： | 本文采用一种新的变分波函数描述GaAs/Ga1-xAlxAs窄量子阱中的浅施主基态,并计算了杂质基态波函数和结合能。计算所得数值结果表明正确考虑窄量子阱与杂质势间的耦合作用是极为重要的。关键词：
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| 关 键 词： | 量子阱 杂质势 耦合作用 半导体 |
| 收稿时间： | 1988-10-13 |
COUPLING EFFECT BETWEEN A SHALLOW-IMPURITY POTENTIAL AND A NARROW QUANTUM-WELL |
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| ZHU JIA-LIN. COUPLING EFFECT BETWEEN A SHALLOW-IMPURITY POTENTIAL AND A NARROW QUANTUM-WELL[J]. Acta Physica Sinica, 1989, 38(7): 1093-1102 |
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| Authors: | ZHU JIA-LIN |
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| Abstract: | Using a novel variational wave function for the ground state of the shallow donor in a narrow GaAs/Ga1-xAlxAs quantum-well, we have calculated the wave function and the binding energy for impurity ground state. The numerical results shown that it is important to describe the coupling between the narrow quantum-well and the impurity potential correctly. |
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