| a-Si:H结的横向光生伏特效应 |
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| 引用本文： | 彭少麒 苏子敏. a-Si:H结的横向光生伏特效应[J]. 物理学报, 1989, 38(8): 1235-1244 |
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| 作者姓名： | 彭少麒 苏子敏 |
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| 作者单位： | 中山大学物理系 |
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| 摘 要： | 本文通过理论分析研究了a-Si:H 结中横向光生伏特效应的定态与瞬态特性. 所得结果表明理论与实验非常符合. 值得注意的是, 按理论关系应用常规不掺杂a-Si:H 特性值估算的两个重要参数(样品中的薄层电阻1 / a , 和传输时间T_m均比由实验得出的值大得多. 基于合理的分析. 我们认为在a-Si:H 层中平行于结输运的电子可能具有异乎寻常高的载流子迁移率。关键词：
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| 关 键 词： | 非晶硅结 半导体 横向光生伏特 |
LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS |
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| Fan Li Liang Can-bin. LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS[J]. Acta Physica Sinica, 1989, 38(8): 1235-1244 |
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| Authors: | Fan Li Liang Can-bin |
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| Abstract: | The steady and transient characteristic of lateral photovoltaic effect in a-Si:H juncitions have been explored by theoretical analysis. The results show that the theoretical predictions are in good agreement with the experiments .It 1is worthy to note that two important parameters of the sample (i,e.the sheet resistance l/as of a-Si:H and the transit time T_m) evaluated according the theoretical relations with the conventional accepted mobility and conductivity of undoped a-Si:H are much larger than that deduced from the experimental data .Based on this with a reasonable analysis, we suggest that electrons in a-Si:H layer may transport parallel to the junction with a surprisingly high mobiliry.
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