Laser investigations at 269 nm for XeF(D-X) in Ne crystals |
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| Authors: | G Zerza G Sliwinski N Schwentner |
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| Institution: | (1) Institut für Experimentalphysik, FU Berlin, Arnimallee 14, W-1000 Berlin, 33, Germany;(2) Present address: Polish Academy of Sciences, IF-FM Fiszera 14, PL 80-952 Gda sk, Poland |
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| Abstract: | From line narrowing in amplified spontaneous emission at the D-X transition (269nm) of XeF in solid Ne a gain coefficient of 3.4 cm–1 has been derived and ground-state losses of 2.8 cm–1 have been determined by variation of the absorption length. A dielectric laser cavity has been optimized with the reflectivities R1=100% and R2=70% for 1 cm long crystals; laser action has been achieved. |
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| Keywords: | 42 50 42 55 R 42 60 B |
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