Laser-initiated metal deposition on GaAs substrates |
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| Authors: | Y. Rytz-Froidevaux R.P. Salathé H.H. Gilgen |
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| Affiliation: | Institute of Applied Physics, University of Berne, Berne, Switzerland |
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| Abstract: | The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a cw krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures of Cd have been deposited at temperatures between 200 and 1000°C. The smallest size of the deposits was ≈4 μm. |
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