Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization |
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Authors: | Ying-Chao Hsu Tung-Liang Shao Ching-Jung Yang Chih Chen |
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Institution: | (1) Department of Materials Science and Engineering, National Chiao Tung University, Hsin-Chu, Taiwan 300, Republic of China |
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Abstract: | This paper investigates the electromigration-induced failures of SnAg3.8Cu0.7 flip-chip solder joints. An under-bump metallization
(UBM) of a Ti/Cr-Cu/Cu trilayer was deposited on the chip side, and a Cu/Ni(P)/Au pad was deposited on the BT board side.
Electromigration damages were observed in the bumps under a current density of 2×104 A/cm2 and 1×104 A/cm2 at 100°C and 150°C. The failures were found to be at the cathode/chip side, and the current crowding effect played an important
role in the failures. Copper atoms were found to move in the direction of the electron flow to form intermetallic compounds
(IMCs) at the interface of solder and pad metallization as a result of current stressing. |
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Keywords: | Electromigration flip chip under-bump metallization BT board current crowding intermetallic compounds |
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