Study of the self-assembling of n-octylphosphonic acid layers on aluminum oxide |
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Authors: | Hauffman Tom Blajiev Orlin Snauwaert Johan van Haesendonck Chris Hubin Annick Terryn Herman |
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Institution: | Department ofMetallurgy, Electrochemistry and Materials Science, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussels, Belgium. thauffma@vub.ac.be |
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Abstract: | The deposition of n-octylphosphonic acid on aluminum oxide was studied. The substrate was pretreated in order to achieve a root-mean-square roughness of <1 nm, a hydroxyl fraction of 30%, and a thickness of approximately 170 nm. It was proven using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) that, rather than a monolayer, an organic multilayer was formed. The growth mechanism was identified as a Stranski-Krastanov one. It was also shown that the use of AFM, probing the surface topography, is essential for a reliable quantification and interpretation of data obtained with XPS. |
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