| 基于环形栅和半环形栅N沟道金属氧化物半导体晶体管的总剂量辐射效应研究 |
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| 引用本文： | 范雪,李威,李平,张斌,谢小东,王刚,胡滨,翟亚红.基于环形栅和半环形栅N沟道金属氧化物半导体晶体管的总剂量辐射效应研究[J].物理学报,2012,61(1):16106-016106. |
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| 作者姓名： | 范雪 李威 李平 张斌 谢小东 王刚 胡滨 翟亚红 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054 |
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| 摘 要： | 在商用0.35 μm互补金属氧化物半导体工艺上制备了两种栅氧化层厚度(tox)的条形栅、环形栅和半环形栅N沟道金属氧化物半导体 (n-channel metal oxide semiconductor, 简记为NMOS) 晶体管, 并进行了2000 Gy(Si)的总剂量辐射效应实验. 实验结果显示, 栅氧厚度对阈值电压漂移的影响大于栅氧厚度的3次方. 对于tox为11 nm的低压NMOS晶体管, 通过环形栅或半环形栅的加固方式能将其抗总剂量辐射能力从300 Gy(Si)提高到2000 Gy(Si)以上; 而对于tox为26 nm的高压NMOS晶体管, 通过环栅或半环栅的加固方式, 则只能在低于1000 Gy(Si)的总剂量下, 一定程度地抑制截止漏电流的增加. 作为两种不同的版图加固方式, 环形栅和半环形栅对同一tox的NMOS器件加固效果类似, 环形栅的加固效果略优于半环形栅. 对于上述实验结果, 进行了理论分析并阐释了产生这些现象的原因.
关键词：
环形栅
半环形栅
总剂量
辐射效应
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| 关 键 词： | 环形栅 半环形栅 总剂量 辐射效应 |
| 收稿时间： | 2011-03-30 |
Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts |
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| Fan Xue,Li Wei,Li Ping,Zhang Bin,Xie Xiao-Dong,Wang Gang,Hu Bin and Zhai Ya-Hong.Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts[J].Acta Physica Sinica,2012,61(1):16106-016106. |
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| Authors: | Fan Xue Li Wei Li Ping Zhang Bin Xie Xiao-Dong Wang Gang Hu Bin and Zhai Ya-Hong |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | Two-edged-gate,annular-gate and ring-gate N-channel metal oxide semiconductor（NMOS） transistors with two different values of gate oxide thickness(tox) are fabricated in a commercial 0.35μm complementary metal oxide semiconductor（CMOS） process.The tests for the total ionizing dose（TID） effects of the transistors are carried out with a total dose up to 2000 Gy（Si）.The results show that the dependence of radiation-induced threshold voltage shift on tox is larger than the power-law tox3.The TID tolerance of the low voltage NMOS(tox = 11 nm) is improved from 300 Gy（Si） to over 2000 Gy（Si） by the annular-gate or ring-gate layout.For the high voltage NMOS(tox = 26 nm),the annular-gate or ring-gate layout can only mitigate the growth of the off-state leakage current when the total dose is less than 1000 Gy（Si）.As radiation hardening techniques,the annular-gate and ring-gate layouts have similar effects, but the annular-gate layout is slightly more effective in terms of the radiation-induced threshold voltage shift and off-state leakage current increase.The test results are theoretically explained by examining and analyzing the experimental data. |
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| Keywords: | annular gate ring gate total ionizing dose radiation effect |
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