| 铜沉淀对直拉硅单晶中洁净区形成的影响 |
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| 引用本文： | 王永志,徐进,王娜婷,吉川,张光超.铜沉淀对直拉硅单晶中洁净区形成的影响[J].物理学报,2012,61(1):16105-016105. |
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| 作者姓名： | 王永志 徐进 王娜婷 吉川 张光超 |
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| 作者单位： | 1. 厦门大学材料学院, 厦门 361005;
2. 浙江大学硅材料国家重点实验室, 杭州 310027;
3. 福建省防火阻燃材料重点实验室, 厦门 361005 |
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| 基金项目： | 国家自然科学基金(批准号：50902116, 50832006)、福建省高等学校新世纪优秀人才支持计划, 硅材料国家重点实验室开放基金项目(批准号：SKL2009-11)和福建省重大平台建设基金 (批准号：2009J1009)资助的课题. |
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| 摘 要： | 研究普通热处理和快速热处理工艺下直拉单晶硅中过渡族金属铜杂质对洁净区生成的影响. 通过腐蚀和光学显微镜研究发现,常规高-低-高三步洁净区生成热处理样品中, 第一步高温热处理前对样品铜沾污,样品中没有洁净区生成,高密度的铜沉淀布满了样品整个截面. 而第二步、第三步热处理过程中引入铜杂质不影响洁净区的生成. 研究表明,高温热处理过程中生成的铜沉淀不能溶解是导致洁净区不能形成的最主要原因. 另外,由于不同温度下热处理,导致引入铜杂质的平衡浓度不同,会在一定程度上影响洁净区的厚度. 对于快速热处理样品,可以得到相似的结果.
关键词：
直拉单晶硅
铜沉淀
洁净区
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| 关 键 词： | 直拉单晶硅 铜沉淀 洁净区 |
| 收稿时间： | 2011-03-15 |
Effect of copper precipitation on the formation of denuded zone in Czchralski silicon |
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| Wang Yong-Zhi,Xu Jin,Wang Na-Ting,Ji Chuan and Zhang Guang-Chao.Effect of copper precipitation on the formation of denuded zone in Czchralski silicon[J].Acta Physica Sinica,2012,61(1):16105-016105. |
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| Authors: | Wang Yong-Zhi Xu Jin Wang Na-Ting Ji Chuan and Zhang Guang-Chao |
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| Institution: | College of Materials, Xiamen University, Xiamen 361005, China;College of Materials, Xiamen University, Xiamen 361005, China;State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;Key Laboratory for Fire Retardant Materials of Fujian Province, Xiamen 361005, China;College of Materials, Xiamen University, Xiamen 361005, China;College of Materials, Xiamen University, Xiamen 361005, China;College of Materials, Xiamen University, Xiamen 361005, China |
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| Abstract: | The influence of copper precipitation on the formation of denuded zone (DZ) in Czochralski silicon has been systematically investigated by means of optical microscopy. It was found that, for conventional furnace high-low-high annealing, the copper precipitates colonies generated along the whole crosssection in the specimens contaminated by copper impurity at the first step of the heat treatment, thus no DZ generated. While in other specimens, DZ formed. Additionally, it was found that the contamination temperature can influence significantly the thermodynamics and kinetic process of the formation of copper precipitates. The phenomena also occurred in the specimens underwent rapid thermal-low-high annealing. On the basis of the step by step investigation, it was revealed that the copper precipitates temperature and point defects type can influence the formation of DZ to a great extent. |
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| Keywords: | Czchralski silicon copper precipitation denuded zone |
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