| 高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器 |
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| 引用本文： | 王杰,韩勤,杨晓红,倪海桥,贺继方,王秀平.高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器[J].物理学报,2012,61(1):18502-018502. |
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| 作者姓名： | 王杰 韩勤 杨晓红 倪海桥 贺继方 王秀平 |
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| 作者单位： | 1. 中国科学院半导体研究所,集成光电子学国家重点实验室, 北京 100083;
2. 中国科学院半导体研究所,超晶格国家重点实验室, 北京 100083 |
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| 基金项目： | 国家重点基础研究发展计划(批准号: 2006CB302802)、 国家高技术研究与发展计划(批准号: 2007AA03Z421)和 国家自然科学基金(批准号: 60376025, 61176053)资助的课题. |
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| 摘 要： | 研制了一种GaAs基波长可调谐共振腔增强型探测器. 采用分子束外延设备生长In0.25Ga0.75As/GaAs量子阱作为器件的有源区, 无偏压时器件的响应峰波长在1071 nm,器件在21 V的直流调谐电压下,实现了波长大于23 nm的调谐. 统计结果表明,当调谐电压大于5 V时,调谐电压与响应波长之间具有稳定、精确的对应关系, 且近似线性调谐,同时对器件响应峰的特性进行了理论分析.
关键词：
GaAs
共振腔增强型探测器
高稳定
线性调谐
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| 关 键 词： | GaAs 共振腔增强型探测器 高稳定 线性调谐 |
| 收稿时间： | 3/1/2011 12:00:00 AM |
High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs |
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| Wang Jie,Han Qin,Yang Xiao-Hong,Ni Hai-Qiao,He Ji-Fang and Wang Xiu-Ping.High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs[J].Acta Physica Sinica,2012,61(1):18502-018502. |
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| Authors: | Wang Jie Han Qin Yang Xiao-Hong Ni Hai-Qiao He Ji-Fang and Wang Xiu-Ping |
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| Institution: | State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated. The quantum wells of In0.25Ga0.75As/GaAs in the active region are grown by molecular beam epitaxy. The peak of the response spectrum at 0 work bias is located at 1071 nm. When the tuning voltage rises from 0 V to 21 V, the peak shows a blue shift of 23 nm, reaching 1048 nm. Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak. The relation is approximately linear when the tuning voltage is greater than 5 V. Some theoretical analysis is performed on the test results. |
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| Keywords: | GaAs resonant cavity enhanced photo-detector high stability linear tuning |
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