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硅基二维平板光子晶体高Q微腔的制作和光谱测量
引用本文:周长柱,王晨,李志远.硅基二维平板光子晶体高Q微腔的制作和光谱测量[J].物理学报,2012,61(1):14214-014214.
作者姓名:周长柱  王晨  李志远
作者单位:中国科学院物理研究所光物理重点实验室, 北京 100190
基金项目:国家自然科学基金 (批准号: 10525419)和国家重点基础研究发展计划(973计划)(2011CB922002)资助的课题.
摘    要:利用微加工技术, 在SOI上制作出了高Q值的光子晶体微腔, Q值可以达7×104以上, 为后续的光与物质相互作用和量子信息方面的实验奠定了基础. 实验结果与理论模拟符合得较好. 通过三维时域有限差分法模拟, 得到光子晶体微腔的Q值为1.2×105左右. 关键词: 光子晶体 微腔 微加工

关 键 词:光子晶体  微腔  微加工
收稿时间:1/7/2011 12:00:00 AM

Fabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs
Zhou Chang-Zhu,Wang Chen and Li Zhi-Yuan.Fabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs[J].Acta Physica Sinica,2012,61(1):14214-014214.
Authors:Zhou Chang-Zhu  Wang Chen and Li Zhi-Yuan
Institution:Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract:We fabricate a high Q photonic crystal cavity on the top of SOI (silicon on insulator) with EBL (electron beam lithography) and ICP (inductively coupled plasma). The value of Q can reach 7× 104. It provides basic condition for the following experiments, for example for the study of interaction between light and substance. The high Q cavity also provides good circumstance for the quantum information. The theoretical result of the value of Q is 1.2× 105 from FDTD (finite difference time domain) simulation.
Keywords:photonic crystal  cavity  micro-fabrication
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