Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping |
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Authors: | M. Jacquemet C. Jacquemet N. Janel F. Druon F. Balembois P. Georges J. Petit B. Viana D. Vivien B. Ferrand |
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Affiliation: | (1) Laboratoire Charles Fabry de lInstitut dOptique UMR 8501 du CNRS, Bât. 503 Centre Universitaire, 91403 Orsay Cedex, France;(2) Laboratoire de Chimie Appliquée de lEtat Solide UMR 7574 du CNRS ENSCP, 11, rue Pierre & Marie Curie, 75231 Paris, Cedex 05, France;(3) LETI/DOPT/CEA-G, 17, Rue des Martyrs, 38054 Grenoble, Cedex 9, France |
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Abstract: | We report here on the efficient laser action of a new Yb-doped crystal Yb3+:Lu2SiO5 (Yb:LSO) under high power diode-pumping (15 W). Its performances were compared to another Yb-doped crystal belonging to the oxyorthosilicate family: the Yb:YSO. For both crystals, more than 7 W of laser radiation around 1 m was obtained under 14.4 W of incident pump power at 978 nm, leading to high optical conversions of more than 50%. Finally, both crystals demonstrate little sensitivity to pump wavelength drift and exhibit broad tunability at a multiwatt level (more than 4 W over 50 nm and 60 nm, respectively for Yb:LSO and Yb:YSO). PACS 42.55.Xi; 42.60.Pk; 42.70.Hj |
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