Melt-mediated coalescence of solution-deposited ZnO nanoparticles by excimer laser annealing for thin-film transistor fabrication |
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Authors: | Heng Pan Nipun Misra Seung H Ko Costas P Grigoropoulos Nate Miller Eugene E Haller and Oscar Dubon |
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Institution: | (1) Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, USA;(2) Department of Materials Science & Engineering, University of California, Berkeley, CA, USA;(3) Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA |
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Abstract: | Nanoparticle solutions are considered promising for realizing low cost printable high performance flexible electronics. In
this letter, excimer laser annealing (ELA) was employed to induce melting of solution-deposited ZnO nanoparticles and form
electrically conductive porous films. The properties of the films were characterized by scanning electron microscopy, high-resolution
transmission electron microscopy, DC conductance, and photoluminescence measurements. Thin-film field-effect transistors have
been fabricated by ELA without the use of conventional vacuum or any high temperature thermal annealing processes. The transistors
show n-type accumulation mode behavior with mobility greater than 0.1 cm2/V s and current on/off ratios of more than 104. Optimization and control of the laser processing parameters minimized thermal impact on the substrate. This technique can
be beneficial in the fabrication of metal oxide based electronics on heat sensitive flexible plastic substrates using low-cost,
large-area solution processing combined with direct printing techniques. |
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Keywords: | PACS" target="_blank">PACS 81 07 Wx 81 15 -z 81 15 Fg 81 16 -c 81 16 Mk |
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