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DFT investigation of the geometrical and electronic structures of (X = B, N and Si) clusters
Authors:Ding Changgeng  Yang Jinlong  Cui Xiangyuan  Wang Kelin
Institution:(1) Open Laboratory of Bond Selective Chemistry and Center for Fundamental Physics, University of Science and Technology of China, Hefei 230026, P.R. China, CN;(2) Center for Fundamental Physics, University of Science and Technology of China, Hefei 230026, P.R. China, CN
Abstract:Geometrical and electronic structures of C35X fullerenes with , N and Si as substitutional dopants have been studied. Three non-equivalent sites in the D6h structure of C36 have been considered for the substitution. We have found that the dopant has a strong tendency to substitute at sites where the carbon atom contributes significantly to the frontier orbitals of C36 and has the weakest interaction with its nearest-neighbor atoms. The relative stability of C35Si and C35B (C35N) has been investigated and high chemical reactivity of C35Si has been predicted. Received 8 July 1999 and Received in final form 4 October 1999
Keywords:PACS  71  20  Tx Fullerenes and related materials  intercalation compounds - 36  40  Cg Electronic and magnetic properties of          clusters - 71  15  Mb Density functional theory  local density approximation
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