Surface oxidation kinetics of sputtering targets

Films of compounds can be deposited by sputtering a metal or alloy target in an atmosphere containing a suitable reactive gas. Both Al and 90 : 10 In : Sn targets have been sputtered in argon/oxygen mixtures to obtain Al₂O₃ and indium tin oxide films. The experiments were carried out in a planar magnetron sputtering system with both dc and rf excitation. To investigate the kinetics of the reactive sputtering process, the time dependence of the total gas pressure was measured after a change in oxygen flow rate or sputtering power; a capacitance manometer gave accurate and reproducible results. There were simultaneous changes in the rf matching conditions when rf excitation was used. These changes can be attributed to the formation of an oxide on the target surface. The time dependence of the oxygen pressure measured for the Al and In : Sn targets have been used to compare various models of the reactive sputtering process. Fitting of the experimental values to these models yields values of the equilibrium oxide thickness on the target and these have been compared with measured values. For rf sputtering of an Al target at 500 W with flow rates of $\text{3}\text{ml}\text{min}$ and $\text{2.2}\text{ml}\text{min}$ for argon and oxygen respectively, both the calculated and the measured value of the oxide thickness is 100 nm.