Electron-electron spin-flip scattering and spin relaxation in III–V and II–VI semiconductors

Spin relaxation time of conduction electrons resulting from electron-electron spin-flip collisions has been investigated in III–V and II–VI semiconductors with InSb-like energy band structure. Analytical expression has been obtained for non-degenerate electron gas. The proposed mechanism can be dominent in the experimental conditions of electron spin resonance in InSb at higher temperatures.