Auger line shape changes in epitaxial (111)Pd/(111)Cu films |
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Authors: | S.S. Chao E.-A. Knabbe R.W. Vook |
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Affiliation: | Department of Chemical Engineering and Materials Science, Syracuse University, Syracuse, New York 13210, USA |
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Abstract: | Epitaxial Pd films ranging in thickness from a few tenths of a monolayer up to many monolayers were formed on (111)Cu substrate films at room temperature under UHV conditions. The growth of these Pd films was monitored in situ by Auger electron spectroscopy. The line profiles of the Cu MMM (61 eV) and Pd MVV (329 eV) AES doublets varied significantly with the amount of Pd deposited. A new measure of the AES doublet line profile, called the R-factor, was defined. A graph Rpd versus Pd film thickness shows a sharp decline with increasing thickness. Superimposed on the major trend is a cyclical variation. A corresponding periodicity in Rcu was observed for the Cu MMM (61 eV) AES doublet. The results suggest that the R-factor provides a direct measure of changes in the electronic structures of the overgrowth and substrate films as the former thickens by a layer-growth mechanism. |
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