Superconductivity and electrical resistivity of amorphous Nb75Ge25 and Nb80Si20 after heavy ion irradiation at low temperature |
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| Authors: | J Bieger H Adrian P Müller G Saemann-Ischenko EL Haase |
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| Institution: | Physikalisches Institut der Universität Erlangen-Nürnberg, D-8520 Erlangen, West-Germany;Institut für angewandte Kernphysik der KfK, D-7500 Karlsruhe, West-Germany |
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| Abstract: | Low temperature irradiation of thin films of Nb75Ge25 (Tc = 3.2 K) and Nb80Si20 (Tc = 4.7 K) with 20 MeV sulfur ions leads to an increase of Tc of about 0.5 K and a decrease of ? of about 1.5 to 3.5%. Annealing up to room temperature partly restores the initial values. Qualitatively the results can be explained by irradiation induced smearing of the structure factor, which is partially recovered by annealing. |
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