Impurity transitions in the photoluminescence spectra of SnO2 |
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| Authors: | G. Blattner C. Klingshirn R. Helbig |
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| Affiliation: | Institut für Angewandte Physik der Universität D 7500 Karlsruhe, Germany;Institut für Angewandte Physik der Universität D 8520 Erlangen, Germany |
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| Abstract: | The photoluminescence of SnO2, a semiconductor with direct, dipole-forbidden gap, is investigated as a function of the lattice temperature and the excitation intensity. The new emission lines observed could be partly interpreted as donor-acceptor-pair recombination and as band-acceptor transition. |
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