Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures |
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| Authors: | K Morigaki I Hirabayashi M Nakayama S Nitta K Shimakawa |
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| Institution: | Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 106, Japan;Faculty of Engineering, Gifu University, Kakamihara, Gifu 504, Japan |
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| Abstract: | Fatigue in the luminescence was observed in glow discharge amorphous silicon at 4.2 K and 77 K. This fatigue was not recovered by infra-red illumination, but by heating the sample at higher temperatures. These results are interpreted in terms of enhancement of non-radiative recombination associated with dangling bonds created by high optical excitation. |
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