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Langmuir probe and optical emission spectroscopy studies for RF magnetron sputtering during TiON thin film deposition
Affiliation:1. Physics Department, Faculty of Science, Al-Azhar University, Cairo, Egypt;2. Physics Department, Faculty of Science, Al-Baha University, Saudi Arabia;3. Physics Department, Faculty of Science, Sohag University, 82524-Sohag, Egypt;4. Physics Department, Faculty of Science and Arts, Al-Mandaq, Al-Baha University, Saudi Arabia;5. Depto. Física, Universidad de Oviedo, CalvoSotelo s/n, 33007 Oviedo, Asturias, Spain;1. Heat Treatment Technology R&BD Group, Korea Institute of Industrial Technology, Incheon, Republic of Korea;2. Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Republic of Korea;3. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;1. Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF-CNRS-Chimie ParisTech, UMR 7174, 6 Quai Watier, 78401 Chatou, France;2. Clermont Université, Université Blaise Pascal, Institute of Chemistry of Clermont-Ferrand (ICCF), CNRS-UMR 6296, 24 Avenue des Landais, 63171 Aubière, France
Abstract:Low-pressure plasma of gas mixture of Ar, O2 and N2 generated by RF magnetron sputtering was characterized by Langmuir probe and optical emission spectroscopy (OES). The electron temperature (Te), ion density (ni) and electron energy distribution function (EEDF) in Ar-O2-N2 plasma atmosphere were calculated from I-V characteristic of Langmuir probe. Boltzmann plot method was applied for calculating the vibrational temperature (Tvib) of the second positive system of N2 (N2SPS) in Ar-O2-N2 plasma. The Te, ni, EEDF and Tvib in Ar-O2-N2 plasma were studied as a function of O2 percentages. It was found, the Tvib increased from 0.47 eV to 0.55 eV as the oxygen percentage in Ar-N2-O2 plasma increased from 10% to 40%. Further, the Te increased from 1.6 eV to 3 eV as the O2 concentration increased from 10% to 40%.
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