Band structure and transport property of graphene/h-BN heterostructure under local potentials |
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| Institution: | 1. Department of Physics, Southern Illinois University Carbondale, Carbondale, IL, 62901, United States;2. Department of Physics, College of Science, Thi Qar University, Nassiriya, 64000, Iraq;3. Department of Physics, College of Education for Pure Science, University of Basrah, Basrah, 61001, Iraq;1. Key Laboratory for Micro-/Nano-optoelectronic Devices of Ministry of Education, College of Information Science and Engineering, Hunan University, Changsha 410082, China;2. Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421002, China;1. Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh, Saudi Arabia;2. Department of Physics, Abbottabad University of Science & Technology, Abbottabad 22010, Pakistan |
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| Abstract: | We investigate band structure and transport property of lattice-matched graphene/hexagonal boron nitride (h-BN) heterostructure using the tight-binding approach. It shows that local potentials can significantly modify the band structure and the transport property. A method to individually manipulate the edge states by local potentials is proposed, including shifts and other deformations of edge bands. The two-terminal conductance of each layer is quantized but the interlayer conductance is non-quantized due to band mixing. In addition, we explore the Landau level spectrum in graphene/h-BN nanoribbons under both magnetic field and local potentials. The plateaus-like behavior of the interlayer conductance is observed. |
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