Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique |
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| Institution: | 1. Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Jalan Universiti, 50603 Kuala Lumpur, Selangor, Malaysia;2. Institute of Sustainable Energy, Universiti Tenaga Nasional (@The National Energy University), Jalan IKRAM-UNITEN, 43000 Kajang, Selangor, Malaysia;3. Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, The National University of Malaysia, 43600 Bangi, Selangor, Malaysia;4. Solar Energy Research Institute, The National University of Malaysia, 43600 Bangi, Selangor, Malaysia;1. Department of Physics, Mohanlal Sukhadia University, Udaipur, 313001 India;2. Department of Basic and Applied Sciences, Punjabi University, Patiala, 147002 India;3. Department of Physics, PSG College of Technology, Coimbatore, 641004 India |
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| Abstract: | In this study, CdS thin films with thicknesses of approximately 100 nm were deposited at a substrate temperature of 100 °C by a sputtering technique under two different ambient conditions—pure Ar ambient and Ar/O2 (99:1) ambient—at deposition power densities of 1.0 and 2.0 W/cm2, respectively The films were polycrystalline with a preferential orientation along the (002) crystal plane; however, the films deposited in the Ar/O2 ambient exhibited reduced crystallinity. Furthermore, the crystallite sizes, micro-strains, and dislocation densities of the films were significantly affected by oxygen diffusion into the films’ crystal structures. The CdS films deposited in the Ar/O2 ambient demonstrated higher optical transmittance and higher bandgaps. Morphologies observed from scanning electron microscopy images revealed that the grains of the films were also significantly affected by the oxygen present in the deposition ambient. Additionally, photoluminescence analysis revealed that the sulfur vacancies in the CdS films were partially filled by oxygen atoms, causing significant variations in the electrical properties of the films. |
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