Investigation of the electrical properties and stability of HfInZnO thin-film transistors |
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| Affiliation: | 1. School of Physics and Technology, Xinjiang University, Urumqi 830046, China;2. Institute of Physics and Electrical Engineering, Kashi University, Kashgar 844009, China;3. College of Microtechnology and Nanotechnology, Qingdao University, Qingdao 266071, China;1. Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China;2. School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China;3. School of Information Science and Technology, Wuhan University of Science and Technology, Wuhan 430081,China;1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People''s Republic of China;2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People''s Republic of China |
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| Abstract: | In this study, amorphous HfInZnO (a-HIZO) thin films and related thin-film transistors (TFTs) were fabricated using the RF-sputtering method. The effects of the sputtering power (50–200 W) on the structural, surface, electrical, and optical properties of the a-HIZO films and the performance and NBIS stability of the a-HIZO TFTs were investigated. The films’ Ne increased and resistivity decreased as the sputtering power increased. The 100 W deposited a-HIZO film exhibited good optical and electrical properties compared with other sputtering powers. Optimization of the 100 W deposited a-HIZO TFT demonstrated good device performance, including a desirable μFE of 19.5 cm2/Vs, low SS of 0.32 V/decade, low Vth of 0.8 V, and high Ion/Ioff of 107, respectively. The 100 W deposited a-HIZO TFT with Al2O3 PVL also exhibited the best stability, with small Vth shifts of -2.2 V during NBIS testing. These high-performance a-HIZO thin films and TFTs with Al2O3 PVL have practical applications in thin-film electronics. |
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