Customizing optical and dielectric traits of ammonium dihydrogen phosphate (ADP) crystal exploiting Zn2+ ion for photonic device applications |
| |
| Institution: | 1. RUSA Centre for Advanced Sensor Technology, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra, India;2. Prof Ram Meghe College of Engineering and Management, Amravati 444701, Maharashtra, India;3. Department of Physics and Electronics, Maulana Azad College of Arts, Science and Commerce, Dr. Rafiq Zakaria Campus, Aurangabad 431001, Maharashtra, India;4. Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia;5. Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia;6. Crystal Growth Laboratory, Department of Physics, Milliya Arts, Science and Management Science College, Beed 431122, Maharashtra, India |
| |
| Abstract: | Current investigation is aimed to explore the influence of Zn2+ ion on structural, optical and dielectric characteristics of ammonium dihydrogen phosphate (ADP) crystal to explore its widespread suitability for photonic device applications. The slow solvent evaporation technique has been adopted to grow the Zn2+ ion influenced ADP (Zn-ADP) crystal. The energy dispersive spectroscopic technique has been employed to determine the constituent elements of Zn-ADP crystal. The optical transmittance of pure and Zn-ADP crystal has been examined within 200–1100 nm by means of UV–visible spectral analysis. The Kurtz–Perry test has been employed to determine the enhancement in second harmonic generation (SHG) efficiency of ADP crystal due to presence of Zn2+ ion. The SHG efficiency of Zn-ADP crystal is found to be 3.15 times greater than potassium dihydrogen phosphate (KDP) and 1.79 times higher than ADP. The Z-scan analysis has been performed at 632.8 nm to study the third order nonlinear optical attributes (such as nonlinear refraction (n2), absorption (β) and cubic susceptibility (χ3)) of Zn-ADP crystal. Dielectric analysis has been carried out within the temperature range of 30 to 90 °C to evaluate the effect of Zn2+ ion on dielectric constant and dielectric loss of ADP crystal. The thermal stability of the grown crystal has been investigated within the temperature range of 40–500 °C. The application of developed Zn-ADP crystal for photonic devices has been discussed in vision of obtained results. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
