Nanostructure and enhancement of the optical properties of Tb-doped NiO for photodiode applications |
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| Institution: | 1. Physics Department, Faculty of Science and Arts, Jouf University, Jouf, Saudi Arabia;2. Thin-film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt;3. Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, P.O. Box 9004, Saudi Arabia;4. Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;5. Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt;6. Physics Department, Faculty of Science, Ain Shams University, Abbassia, 11566, Cairo, Egypt;1. School of Physics, Beijing Institute of Technology, Beijing 100081, China;2. School of Mathematical and Physical Sciences, SciMERIT, University of Technology Sydney, New South Wales 2007, Australia |
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| Abstract: | In the present work, pure and 1, 2.5, 5 and 10% Tb-doped NiO nanostructures were fabricated in the form of thin-films by the sol-gel spin coating process. The prepared structures were identified by an X-ray diffraction pattern and atomic force microscopy. The results of the X-ray diffraction indicate that the prepared films are polycrystalline with a cubic lattice face-centered for wholly Tb-doped concentration films. The surface topography of the films was studied by atomic force microscopy, and surface mapping was introduced to check the quality of the surface for optical investigations. The measured optical transmission indicated a high transmission that exceeds 80% through the visible region depending on the Tb-doping concentrations. It is affirmed that the measured optical bandgap and the index of refraction are strongly influenced by the Tb-doping concentrations. The parameters of nonlinearity were also critically affected by the Tb-doping concentrations. This innovative result can hopefully be applied in an industrialized approach for the field of photodiode devices. |
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