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利用原子层外延方法制备的ZnS:Er3+薄膜的交流电致发光特性
引用本文:孟立建,钟国柱. 利用原子层外延方法制备的ZnS:Er3+薄膜的交流电致发光特性[J]. 发光学报, 1987, 8(3): 226-235
作者姓名:孟立建  钟国柱
作者单位:中国科学院长春物理研究所
摘    要:采用原子层外延方法(ALE)制备了ZnS:Er3+交流电致发光(ACEL)薄膜,得到了明亮的绿色EL。发现了随Er3+离子浓度增加,对应于4F9/2→4I15/2跃迁的谱线强度增加甚至超过2H11/2→4I15/2跃迁的谱线强度。通过对EL衰减的分析,发现了绿红比随外加电压的变化关系以及EL光谱与温度的关系。在Er3+离子浓度较高时,Er3+离子之间发生明显的能量传递。提出了Er3+离子间的交叉驰豫模型并计算了交叉弛豫速率,同拟合衰减曲线得到的值相比,两者符合得较好。

收稿时间:1987-01-22

THE CHARACTERISTICS OF ACEL IN ZnS:Er3+ THIN FILMS GROWN BY ATOMIC LAYER EPITAXY METHOD (ALE)
Meng Lijian,Zhong Guozhu. THE CHARACTERISTICS OF ACEL IN ZnS:Er3+ THIN FILMS GROWN BY ATOMIC LAYER EPITAXY METHOD (ALE)[J]. Chinese Journal of Luminescence, 1987, 8(3): 226-235
Authors:Meng Lijian  Zhong Guozhu
Affiliation:Changchun Institute of Physics, Academic Sinica
Abstract:The characteristics of ACEL in ZnS:Er3+ thin films grown by ALE method were reported for the first time. Especially, at high Er3+ concentration, red emission spectral line corresponding to the transition from 4F9/2 to 4I15/2 was strongly increased. The cross-relaxation process between Er ions was proposed for the interpretation of the experimental results.The EL device is glass-SnO2-Y2O3-ZnS:Er3+-Y2O3-Al sandwich structure.The Y2O3 insulator layer was made by electro-beam evaporation.ZnS:Er3+ active layer was grown by ALE method. The thicknesses of Y2O3 layer and ZnS:Er3+ active layer were about 300nm and 400nm, respectively. The concentrations of Er3+ in ZnS ranging from 0.05% to 12%(wt).
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