| 锗硅/硅异质结材料的化学气相淀积生长动力学模型 |
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| 引用本文： | 戴显英,金国强,董洁琼,王船宝,赵娴,楚亚萍,奚鹏程,邓文洪,张鹤鸣,郝跃.锗硅/硅异质结材料的化学气相淀积生长动力学模型[J].物理学报,2011,60(6):65101-065101. |
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| 作者姓名： | 戴显英 金国强 董洁琼 王船宝 赵娴 楚亚萍 奚鹏程 邓文洪 张鹤鸣 郝跃 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:6139801-1)、国防预研基金(批准号:914A08060407DZ0103)资助的课题. |
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| 摘 要： | 基于化学气相淀积(CVD)的Grove理论和Fick第一定律,提出并建立了锗硅(SiGe)/硅(Si)异质结材料减压化学气相淀积(RPCVD)生长动力学模型.与以前锗硅/硅异质结材料生长动力学模型仅考虑表面反应控制不同,本模型同时考虑了表面反应和气相传输两种控制机理,并给出了两种控制机理极限情况下的模型.本模型不仅适用于低温锗硅/硅应变异质结材料生长的表征,也适用于表征高温锗硅/硅弛豫异质结材料生长的表征.将模型计算值与实验结果进行了对比,无论是625℃低温下的应变SiGe的生长,还是900℃高温下的弛豫
关键词：
SiGe/Si异质结材料
化学气相淀积生长动力学模型
Grove理论
Fick第一定律
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| 关 键 词： | SiGe/Si异质结材料 化学气相淀积生长动力学模型 Grove理论 Fick第一定律 |
| 收稿时间： | 2010-11-18 |
A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials |
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| Dai Xian-Ying,Jin Guo-Qiang,Dong Jie-Qiong,Wang Chuan-Bao,Zhao Xian,Chu Ya-Ping,Xi Peng-Cheng,Deng Wen-Hong,Zhang He-Ming,Hao Yue.A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials[J].Acta Physica Sinica,2011,60(6):65101-065101. |
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| Authors: | Dai Xian-Ying Jin Guo-Qiang Dong Jie-Qiong Wang Chuan-Bao Zhao Xian Chu Ya-Ping Xi Peng-Cheng Deng Wen-Hong Zhang He-Ming Hao Yue |
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| Institution: | School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China;School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China |
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| Abstract: | Based on Grove model of CVD(chemical vapor deposition) and Fick's first law,we propose and build the RPCVD(reduced pressure chemical vapor deposition) growth kinetics model of GeSi/Si heterojunction materials.Different from previous SiGe/Si kinetics model,which only considers surface reaction controlling mechanism,our model simultaneously considers two controlling mechanisms:surface reaction and vapor transport.We also consider the model at these two controlling mechanism limits.This model is suitable for c... |
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| Keywords: | SiGe/Si heterojunction materials chemical vapor deposition growth kinetics model Grove model Fick's first law |
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