铒离子注入碳化硅的射程和退火行为研究

用300—500 keV能量的铒(Er)离子注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的Er离子注入6H-SiC晶体的平均投影射程R_p和射程离散ΔR_p,将测出的实验值和TRIM软件得到的理论模拟值进行了比较,发现R_p的实验值与理论值符合较好,ΔR_p的实验值和理论值差别大一些 关键词： 离子注入 投影射程和射程离散 退火行为 卢瑟福背散射技术

Range and annealing behavior of Er ions implanted in SiC

Er ions with an energy range of 300—500 keV are implanted in 6H-SiC crystal samples separately. The values of mean projected range R_p and range straggling ΔR_p of Er ions with a dose of 5×10¹⁵ cm^-2 implanted in 6H-SiC crystal are measured by Rutherford backscattering technique. The measured data are compared with TRIM code prediction. It is seen that the experimental R_p values are in good agreement with theoretical values, but for ΔR_p values there are bigger differences between the experimental data and the theoretical values. Research shows that the higher the implanting energy, the heavier the damage is. Perfect recrystallization of 6H-SiC is achieved by annealing at 1400 ℃, however it is accompanied by the segregation of Er ions to the surface.