掺杂水平对ZnO基变阻器电学性能的影响

根据相图规则设计、制备了三个系列不同Bi₂O₃与Sb₂O₃掺杂水平的ZnO基复合变阻器材料，研究了掺杂对氧化锌复合陶瓷电学性能的影响.研究发现，当Sb元素掺杂水平较低时，随着Sb₂O₃掺杂量的增加，所得氧化锌基变阻器材料漏电流的变化也很小，非线性系数(非线性系数α_L和击穿非线性系数α_B)将减小，而场强(场关键词：氧化锌掺杂复合陶瓷变阻器电学性质

Influence of doping level on electrical properties of ZnO-based composite varistor

ZnO-based varistors with different doping levels of antimony and bismuth are prepared and their electrical properties are measured. It is found that when the doping level of Sb is small，with the amount of Sb₂O₃ increasing，the leakage current changes little，both nonlinear coefficient α_L and breakdown nonlinear coefficient α_B decrease but both field strength E_L and breakdown field strength E_B increase; when the doping level of Sb is high，with more Sb₂O₃ added，the leakage current increases sharply，α_L and α_B decrease further，and E_L and E_B drop down suddenly. With doping level of Bi increasing，the leakage current increases，α_L and α_B increase，but E_L and E_B decrease.