Low-temperature performance of thin solid electrolyte cell based on MoO3-doped Bi2O3 |
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| Authors: | T Suzuki K Kaku S Ukawa Y Dansui |
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| Institution: | Department of Industrial Chemistry, Tokyo University of Agriculture and Technology, Koganeishi, Tokyo 184, Japan |
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| Abstract: | Improvement of low-temperature performance of oxygen sensor was studied by preparing a thin film of 15 μm thickness. Melt-quenched Bi2O3 film doped with 16 mol% MoO3 was used as an electrolyte after HF treatment. Impedance measurements were carried out in the frequency range DC-100 KHz. Resistance of electrolyte in the form of thin film (110ω) was negligibly small compared with the overall resistance of the cell (287 Kω) at 350°C. Oxygen/air concentration cell was constructed and the cell performance was measured at 350 and 300°C. Transference number close to unity and rapid response were observed at 350°C, however the cell showed a long response time of about 3 min at 300°C. |
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