Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation |
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| Authors: | Ke Zhang Simian Li Guangfei Liang Huan Huang Yang Wang Tianshu Lai Yiqun Wu |
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| Affiliation: | 1. Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;2. State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yet-Sen University, Guangzhou 510275, China |
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| Abstract: | The crystallization dynamics of as-deposited amorphous Ge2Sb2Te5 films induced by nano- and picosecond single laser pulse irradiation is studied using in situ reflectivity measurements. Compared with nanosecond laser pulse, the typical recalescence phenomenon did not appear during the picosecond laser pulse-induced crystallization processes when the pulse fluence gradually increased from crystallization to ablation threshold. The absence of melting and recalescence phenomenon significantly decreased the crystallization time from hundreds to a few tens of nanoseconds. The role of pulse duration time scale on the crystallization process is qualitatively analyzed. |
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| Keywords: | Phase-change material Nanosecond laser pulse Picosecond laser pulse Crystallization Extra-non-equilibrium process |
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