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Field-induced CDW in HMTSF-TCNQ
Authors:Keizo Murata  Woun Kang  Kosuke Masuda  Tetsuji Kuse  Takahiko Sasaki  Keiichi Yokogawa  Harukazu Yoshino  James S Brooks  Eun Sang Choi  Andhika Kiswandhi  Reizo Kato
Institution:1. Graduate School of Science, Osaka City Univ, Sumiyoshi-ku, Osaka 558-8585, Japan;2. Department of Physics, Ewha Womans University, Seoul 120-750, South Korea;3. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;4. Nat. High Mag. Field Lab. Florida St. University, Tallahassee, FL 32306-4005, USA;5. RIKEN, Wako, Saitama 351-0198, Japan
Abstract:Field-induced successive transitions were observed in magnetoresistance in the quasi-one-dimensional organic conductor, HMTSF-TCNQ, hexamethylene-tetraselena-fulvalene-tetracyanoquinodimethane. The magnetoresistance exhibits kink transitions accompanying hysteresis at pressures around 1 GPa, but neither at p=0 nor at 2 GPa. At p=0 and below 30 K, this material undergoes charge density wave (CDW) state, which is suppressed around 1 GPa, where successive transitions are observed. Since these behavior is only observed at the boundary in pressure between insulator and metal, and the nature of the insulating state is CDW at p=0, it is strongly suggested that the successive transitions observed in magnetoresistance might be associated with CDW, accordingly a field-induced CDW by the one-dimensionalization by strong magnetic field ranging from 10 to 30 T. The behaviors are compared with previously claimed FICDW and the established FISDW (field-induced-spin-density-wave).
Keywords:E d charge density wave  Quasi-1D  Organic conductor  HMTSF-TCNQ
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