First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 |
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Authors: | Young Jun Oh Hyeon-Kyun NohK.J. Chang |
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Affiliation: | Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea |
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Abstract: | We investigate the stability of boron dopants near the interface between crystalline Si and amorphous SiO2 through first-principles density functional calculations. An interstitial B is found to be more stable in amorphous SiO2 than in Si, so that B dopants tend to segregate to the interface. When defects exist in amorphous SiO2, the stability of B is greatly enhanced, especially around Si floating bond defects, while it is not significantly affected near Si–Si dimers, which are formed by O-vacancy defects. |
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Keywords: | B dopants B segregation Si/SiO2 interface Dopant segregation Metal-oxide-semiconductor field-effect-transistor |
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