Carrier decay process of nanoscaled SiGe particles embedded in SiO2 matrix |
| |
Authors: | Kun Zhong Min LaiYulin Chen Bing Gu |
| |
Institution: | School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, No. 219 Ning Liu Road, Nanjing 210044, China |
| |
Abstract: | Nanoscaled SiGe particles (NPs) are formed by ions implantation and annealing treatment methods. For any sample, the total dose of Si and Ge dopants is 3×1016 cm−2. Strong photoluminescence (PL) peaks centered around red emission region are observed. This PL peak red shifts from 653 nm–695 nm with the increase of Ge-doping dose, which is ascribed to the quantum confinement effect. The PL lifetime spectra exhibit a stretched exponential decay with characteristic decay time τ varying from 50.2–23.1 μs and dispersion factor β in the range of 0.67–0.86. |
| |
Keywords: | SiGe NPs Ion implantation Photoluminescence Lifetime |
本文献已被 ScienceDirect 等数据库收录! |