The origin of a peak in the reststrahlen region of SiC |
| |
| Authors: | JAA Engelbrecht IJ van Rooyen A Henry E Janzén EJ Olivier |
| |
| Institution: | 1. Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031, South Africa;2. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden |
| |
| Abstract: | A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers. |
| |
| Keywords: | Infrared reflectance SiC Reststrahlen region Anomalous peak |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
