Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb |
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Authors: | S.S. Miya V. WagenerJ.R. Botha |
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Affiliation: | Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001, South Africa |
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Abstract: | The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga1−xInxSb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga1−xInxSb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga1−xInxSb vapour composition and solid composition has been studied at a V/III ratio of 0.78. |
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Keywords: | Photoluminescence MOVPE GaInSb Triethylgallium Atmospheric pressure |
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