Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects |
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Authors: | H.C. Jeon S.J. Lee T.W. Kang S.H. Park |
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Affiliation: | 1. Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea;2. Department of Electronics Engineering, Catholic University of Daegu, Kyeongbuk 712-702, Republic of Korea |
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Abstract: | The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon. |
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Keywords: | Quantum well Internal field Optical gain Applied electric field |
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