Characterization of AgInS2 thin films prepared by vacuum evaporation |
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| Authors: | Yoji Akaki Kyohei Yamashita Tsuyoshi Yoshitake Shigeuki Nakamura Satoru Seto Takahiro Tokuda Kenji Yoshino |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki 885-8567, Japan;2. Department of Applied Science for Electronics and Materials, University of Kyushu, 6-1 Kasugakoen, Kasuga, Fukuoka 816-8580, Japan;3. Department of Electrical and Electronics Engineering, Tsuyama National College of Technology, 624-1 Numa, Tsuyama, Okayama 708-8509, Japan;4. Department of Electrical Engineering, Ishikawa National College of Technology, 1 Kitacyujo, Tsubata, Kahoku, Ishikawa 929-0392, Japan;5. Department of Electrical and Electronics Engineering, University of Miyazaki, 1-1 Kibanadai-nishi, Miyazaki 889-2192, Japan |
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| Abstract: | We characterized AgInS2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency. |
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| Keywords: | AgInS2 Evaporation Sulfurization Photoluminescence Activation energy |
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