Structural,elastic and thermodynamic properties under pressure and temperature effects of MgIn2S4 and CdIn2S4 |
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| Authors: | A Bouhemadou K Haddadi R Khenata D Rached S Bin-Omran |
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| Institution: | 1. Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif, Algeria;2. Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 Mascara, Algeria;3. Department of Physics, Faculty of Science, University of Sidi-Bel-Abbes, 22000, Algeria;4. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia |
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| Abstract: | A density functional-based method is used to investigate the structural, elastic and thermodynamic properties of the cubic spinel semiconductors MgIn2S4 and CdIn2S4 at different pressures and temperatures. Computed ground structural parameters are in good agreement with the available experimental data. Single-crystal elastic parameters are calculated for pressure up to 10 GPa and temperature up to 1200 K. The obtained elastic constants values satisfy the requirement of mechanical stability, indicating that MgIn2S4 and CdIn2S4 compounds could be stable in the investigated pressure range. Isotropic elastic parameters for ideal polycrystalline MgIn2S4 and CdIn2S4 aggregates are computed in the framework of the Voigt–Reuss–Hill approximation. Pressure and thermal effects on some macroscopic properties such as lattice constant, volume expansion coefficient and heat capacities are predicted using the quasi-harmonic Debye model in which the lattice vibrations are taken into account. |
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| Keywords: | Semiconductors Ab initio calculations Elastic properties Thermodynamic properties Thermal expansion |
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