Effect of thickness of CdTe/Ge heterojunction photodetectors on optoelectronic properties |
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| Authors: | Mahasin F. Hadi Al-Kadhemy |
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| Affiliation: | Al-Mustansiriyah University, College of Science, Physics Department, Baghdad, Iraq |
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| Abstract: | The influence of the thickness of CdTe/n-Ge heterojunction photodetectors on I–V curves was studied experimentally and theoretically. The thicknesses of the CdTe thin films were 110, 130, 150, and 200 nm. The power intensity of illumination was 150 mW/cm2. Increasing the thickness led to an increase in photocurrent. |
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| Keywords: | CdTe thin film Effect of thickness Optoelectronic properties Theoretical model |
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