Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect |
| |
Authors: | A. Shakoor R. Lo Savio S.L. Portalupi D. Gerace L.C. Andreani M. Galli T.F. Krauss L. O'Faolain |
| |
Affiliation: | 1. SUPA, School of Physics and Astronomy, University of St. Andrews, North Haugh, St. Andrews, Fife KY16 9SS, Scotland, United Kingdom;2. Dipartimento di Fisica “A. Volta,” Università di Pavia, 27100 Pavia, Italy |
| |
Abstract: | We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. |
| |
Keywords: | Silicon light emission Photonic crystal Defect luminescence Silicon photonics Nanocavity Purcell effect |
本文献已被 ScienceDirect 等数据库收录! |
|