First-principles materials design of CuInSe2-based high-efficiency photovoltaic solar cells

Based on ab initio   electronic structure calculations by self-interaction-corrected local-density-approximation (SIC-LDA) with the Korringa–Kohn–Rostoker coherent potential approximation (KKR-CPA), we propose a materials design for high efficiency photovoltaic solar cells (PVSCs). It is shown that (i) the concentration dependence of the mixing energy of CuIn_1−xGa_xSe₂${\mathrm{CuIn}}_{1-x}{\mathrm{Ga}}_x{\mathrm{Se}}_2$ shows upward convexity, thus this system favors phase separation. Due to the type II band alignment between CuInSe₂${\mathrm{CuInSe}}_2$ and CuGaSe₂${\mathrm{CuGaSe}}_2$, efficient electron–hole separation is realized in decomposed phase of this system. (ii) CuIn_1−xZn_0.5xSn_0.5xSe₂${\mathrm{CuIn}}_{1-x}{\mathrm{Zn}}_{0.5x}{\mathrm{Sn}}_{0.5x}{\mathrm{Se}}_2$ has a direct band gap and no impurity state appears in the gap. Therefore, cost reduction is possible by using Zn and Sn instead of In. (iii) n-type CuAl_1−xSn_xS₂${\mathrm{CuAl}}_{1-x}{\mathrm{Sn}}_x{\mathrm{S}}_2$ and p-type Cu_1−xV_CuxAlS₂${\mathrm{Cu}}_{1-x}{\mathrm{V}}_{\mathrm{Cu}x}{\mathrm{AlS}}_2$ have negative activation energy for doped impurities and are expected to be low-resistive transparent conducting sulfides, which should be useful for CuInSe₂${\mathrm{CuInSe}}_2$-based PVSCs.