Ferromagnetism induced by oxygen-vacancy complex in (Mn,in) codoped ZnO |
| |
| Authors: | Kongping Wu Shulin Gu Kun Tang Shunming Zhu Mengran Zhou Yourui Huang Mingxiang Xu Rong Zhang Youdou Zheng |
| |
| Institution: | 1. School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan, Anhui 232001, People''s Republic of China;2. Nanjing National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People''s Republic of China;3. Data Storage Institute, A?STAR, Singapore 117608, Singapore;4. Department of Physics, Southeast University, Nanjing 210096, China |
| |
| Abstract: | Mn doped Zinc oxide (ZnO) thin films were prepared by metal organic chemical vapor deposition (MOCVD) technique. Structural characterizations by X-ray diffraction technique (XRD) and photoluminescence (PL) indicate the crystal quality of ZnO films. PL and Raman show a large fraction of oxygen vacancies (VO2+) are generated by vacuum annealed the film. The enhancement of ferromagnetism in post-annealed (Mn, In) codoped ZnO could result from VO2+ incorporation. The effect of VO2+ on the magnetic properties of (Mn, In) codoped ZnO has been studied by first-principles calculations. It is found that only In donor cannot induce ferromagnetism (FM) in Mn-doped ZnO. Besides, the presence of VO2+ makes the Mn empty 3d-t2g minority state broadened, and a t2g-VO2+ hybrid level at the conduction band minimum forms. The presence of VO2+ can lead to strong ferromagnetic coupling with the nearest neighboring Mn cation by BMP model based on defects reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Mn 3d electrons trapped in oxygen vacancies. |
| |
| Keywords: | Room-temperature ferromagnetism Diluted magnetic semiconductor Magnetization |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
