The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitrides |
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Authors: | BJ Ruck F Natali NOV Plank Binh Do Le M Azeem Maha Alfheid C Meyer HJ Trodahl |
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Institution: | 1. The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington, New Zealand;2. Institut Néel, Centre National de la Recherche Scientifique and Université Joseph Fourier, B.P. 166, F-38042 Grenoble Cedex, France |
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Abstract: | The rare-earth nitrides are ferromagnetic semiconductors with promise for spintronic devices. Their most common dopants are nitrogen vacancies (VN), with a small enough energy of formation that they exist at of order 1% in epitaxial films. Here we report preliminary investigations of their effect on the magnetic states of two of them in the series, GdN and EuN. In the former we find an enhanced Curie temperature at very high VN concentration, and the Eu2+ ions associated with VN in the latter show strong exchange with their Eu3+ neighbours that might form the basis of a diluted magnetic semiconductor. |
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Keywords: | Magnetic semiconductors Rare-earth nitrides Nitrogen vacancies |
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