| Significant performance enhancement in A1GaN/GaN high electron mobility transistor by high-κ organic dielectric |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant No. 50932002）, the Youth Foundation （Grant No. L08010301JX0805） and Start-up Foundation of University of Electronic Science and Technology of China （Grant No. Y02002010301041）, and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry of China （Grant No. A09010301GG-01）. |
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| 摘 要： | The electrical properties of A1GaN/GaN high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.
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| 关 键 词： | 高电子迁移率晶体管 有机介质 性能增强 HEMT器件 通用汽车 电学性质 漏极电流 大跨结构 |
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