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Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors
Authors:Ren Fan  Hao Zhi-Biao  Wang Lei  Wang Lai  Li Hong-Tao  and Luo Yi
Affiliation:Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract:SiNx passivation, plasma-enhanced chemical vapour deposition, A1GaN/GaN het- erostructure, current collapse
Keywords:SiNx passivation   plasma-enhanced chemical vapour deposition   A1GaN/GaN het- erostructure   current collapse
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