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Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1−x strained quantum wells |
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| Authors: | F. F. Maia Jr. J. A. K. Freire G. A. Farias V. N. Freire E. F. da Silva Jr. |
| Affiliation: | a Departamento de Física, Universidade Federal do Ceará, Centro de Ciências Exatas, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil b Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, 50670-901 Recife, Pernambuco, Brazil |
| Abstract: | The excitonic properties of a ZnSe/ZnSxSe1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra. |
| Keywords: | Strain effects Binding energy Interface fluctuations Quantum well |
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