Semiconductor-metal transition in novel Cd2Os2O7 |
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| Authors: | AW Sleight JL Gillson JF Weiher W Bindloss |
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| Institution: | Central Research Department, E.I. du Pont de Nemours and Company, Wilmington, Delaware 19898, U.S.A. |
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| Abstract: | Cd2Os2O7 has been prepared for the first time and has the pyrochlore structure with a cubic cell edge of 10.17 Å at room temperature. Electrical, magnetic, and DSC measurements on single crystals of this compound show a sharp transition at 225 K which we interpret to be an electronic, second-order, metal-semiconductor transition. The low-temperature semiconducting phase is probably antiferromagnetic. |
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