Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors

For the first time Shubnikov-de Haas oscillations have been observed in p-type inversion layers of (111) and (100) silicon field effect transistors. For both orientations a single electric subband was found. The effective mass of the surface carriers was determined from the temperature dependence of the oscillations, for (111) surfaces as a function of the surface electric field. At low gate voltages spin splitting of the Landau levels was resolved.