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Semiconductor-to-metal transition in GaP under high pressure |
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| Authors: | Akifumi Onodera Naoto Kawai Kozo Ishizaki Ian L. Spain |
| Affiliation: | Department of Material Physics, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan;Department of Chemical Engineering, University of Maryland, Laboratory for High Pressure Science, College Park, Maryland 20742, U.S.A. |
| Abstract: | The semiconductor-to-metal transition was observed in GaP under very high pressure exceeding 500 kbar. At the transition the electrical resistance decreased almost instantaneously by five orders of magnitude. This study was also carried out on BP and SiC and no drastic change was observed in their electrical resistance. |
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